IRFB4110PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Threshold Voltage :

4V

Drain to Source Breakdown Voltage :

100V

Length :

10.66mm

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Rise Time :

67ns

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Number of Pins :

3

Current Rating :

180A

Continuous Drain Current (ID) :

180A

Contact Plating :

Tin

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Turn-Off Delay Time :

78 ns

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

670A

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Packaging :

Tube

Published :

2008

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

9620pF @ 50V

Lead Free :

Lead Free

Radiation Hardening :

No

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

100V

Nominal Vgs :

4 V

Termination :

Through Hole

Dual Supply Voltage :

100V

Fall Time (Typ) :

88 ns

Width :

4.826mm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Factory Lead Time :

12 Weeks

Number of Elements :

1

Height :

16.51mm

Power Dissipation :

370W

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Recovery Time :

75 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

370W Tc

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0045ohm

Turn On Delay Time :

25 ns