IRFB4110GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Mount :

Through Hole

Power Dissipation-Max :

370W Tc

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

88 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

16.51mm

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Nominal Vgs :

4 V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

180A

Length :

10.668mm

Number of Pins :

3

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Factory Lead Time :

10 Weeks

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Turn On Delay Time :

25 ns

Drain-source On Resistance-Max :

0.0045ohm

FET Type :

N-Channel

Transistor Application :

SWITCHING

Power Dissipation :

370W

Width :

4.826mm

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Threshold Voltage :

4V

Lead Free :

Lead Free

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Rise Time :

67ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

78 ns

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

670A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2007

Input Capacitance (Ciss) (Max) @ Vds :

9620pF @ 50V

Element Configuration :

Single