IRFB4019PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Termination :

Through Hole

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

95m Ω @ 10A, 10V

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Mount :

Through Hole

Turn On Delay Time :

7 ns

Dual Supply Voltage :

150V

Lead Free :

Lead Free

ECCN Code :

EAR99

Number of Elements :

1

Rise Time :

13ns

Number of Channels :

1

Transistor Application :

AMPLIFIER

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Continuous Drain Current (ID) :

17A

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

80W Tc

Turn-Off Delay Time :

12 ns

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Power Dissipation :

80mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Threshold Voltage :

4.9V

Max Junction Temperature (Tj) :

175°C

REACH SVHC :

No SVHC

Resistance :

95mOhm

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Height :

19.8mm

Vgs (Max) :

±20V

Packaging :

Tube

Fall Time (Typ) :

7.8 ns

Vgs(th) (Max) @ Id :

4.9V @ 50μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

4.9 V

Drain to Source Breakdown Voltage :

150V

Number of Pins :

3

Width :

4.82mm

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 50V

Element Configuration :

Single

Length :

10.6426mm

Recovery Time :

96 ns