IRFB38N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Radiation Hardening :

No

Package / Case :

TO-220-3

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Resistance :

54Ohm

Mount :

Through Hole

Lead Free :

Lead Free

Recovery Time :

240 ns

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Transistor Element Material :

SILICON

Fall Time (Typ) :

47 ns

Rise Time :

95ns

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Turn On Delay Time :

16 ns

Turn-Off Delay Time :

29 ns

Height :

9.017mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Vgs (Max) :

±20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

54m Ω @ 26A, 10V

Factory Lead Time :

12 Weeks

Width :

4.826mm

Length :

10.668mm

Voltage - Rated DC :

200V

Case Connection :

DRAIN

Published :

2002

FET Type :

N-Channel

Contact Plating :

Tin

Power Dissipation :

320W

Current Rating :

38A

Nominal Vgs :

5 V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

460 mJ

Series :

HEXFET®

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Threshold Voltage :

5V

Drain to Source Breakdown Voltage :

200V

Element Configuration :

Single

Power Dissipation-Max :

3.8W Ta 300W Tc

Continuous Drain Current (ID) :

44A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Dual Supply Voltage :

200V

Packaging :

Tube

Mounting Type :

Through Hole

REACH SVHC :

No SVHC