IRFB38N20DPBF
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- Mfr.Part #
- IRFB38N20DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IRFB38N20 - 12V-300V N-CHANNEL P
- Stock
- 73,358
- In Stock ：
- 73,358
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 38A
- Voltage - Rated DC :
- 200V
- Width :
- 4.826mm
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 47 ns
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 25V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Recovery Time :
- 240 ns
- Package / Case :
- TO-220-3
- Published :
- 2002
- Mount :
- Through Hole
- Threshold Voltage :
- 5V
- Packaging :
- Tube
- Power Dissipation-Max :
- 3.8W Ta 300W Tc
- Power Dissipation :
- 320W
- Gate Charge (Qg) (Max) @ Vgs :
- 91nC @ 10V
- Factory Lead Time :
- 12 Weeks
- Length :
- 10.668mm
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 200V
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 26A, 10V
- Lead Free :
- Lead Free
- Rise Time :
- 95ns
- REACH SVHC :
- No SVHC
- Series :
- HEXFET®
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 44A
- Turn On Delay Time :
- 16 ns
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 29 ns
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 9.017mm
- Radiation Hardening :
- No
- Resistance :
- 54Ohm
- Dual Supply Voltage :
- 200V
- Nominal Vgs :
- 5 V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Avalanche Energy Rating (Eas) :
- 460 mJ
- Gate to Source Voltage (Vgs) :
- 30V
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Datasheets
- IRFB38N20DPBF
N-Channel Tube 54m Ω @ 26A, 10V ±20V 2900pF @ 25V 91nC @ 10V TO-220-3
IRFB38N20DPBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 460 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2900pF @ 25V.This device has a continuous drain current (ID) of [44A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 29 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.Its overall power consumption can be reduced by using drive voltage (10V).
IRFB38N20DPBF Features
the avalanche energy rating (Eas) is 460 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 29 ns
a threshold voltage of 5V
IRFB38N20DPBF Applications
There are a lot of Infineon Technologies
IRFB38N20DPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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