IRFB3806PBF
- Mfr.Part #
- IRFB3806PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 43A TO220AB
- Stock
- 3,899
- In Stock :
- 3,899
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Tin
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 49 ns
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 40ns
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Fall Time (Typ) :
- 47 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 43A
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 71W Tc
- Number of Terminations :
- 3
- Threshold Voltage :
- 4V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1150pF @ 50V
- Series :
- HEXFET®
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 71W
- Height :
- 9.017mm
- Factory Lead Time :
- 12 Weeks
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Recovery Time :
- 33 ns
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 15.8m Ω @ 25A, 10V
- Resistance :
- 15.8mOhm
- ECCN Code :
- EAR99
- Width :
- 4.82mm
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.6426mm
- Package / Case :
- TO-220-3
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 6.3 ns
- Vgs (Max) :
- ±20V
- Published :
- 2008
- Datasheets
- IRFB3806PBF

N-Channel Tube 15.8m Ω @ 25A, 10V ±20V 1150pF @ 50V 30nC @ 10V TO-220-3
IRFB3806PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1150pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 43A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 49 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFB3806PBF Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 49 ns
a threshold voltage of 4V
IRFB3806PBF Applications
There are a lot of Infineon Technologies
IRFB3806PBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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