IRFB3806PBF

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Mfr.Part #
IRFB3806PBF
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 60V 43A TO220AB
Stock
3,899
In Stock :
3,899

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Contact Plating :
Tin
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
49 ns
Radiation Hardening :
No
JEDEC-95 Code :
TO-220AB
Rise Time :
40ns
Mounting Type :
Through Hole
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 50μA
Fall Time (Typ) :
47 ns
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Drain to Source Breakdown Voltage :
60V
Continuous Drain Current (ID) :
43A
Operating Temperature :
-55°C~175°C TJ
Power Dissipation-Max :
71W Tc
Number of Terminations :
3
Threshold Voltage :
4V
Input Capacitance (Ciss) (Max) @ Vds :
1150pF @ 50V
Series :
HEXFET®
Mount :
Through Hole
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
71W
Height :
9.017mm
Factory Lead Time :
12 Weeks
REACH SVHC :
No SVHC
Lead Free :
Lead Free
Recovery Time :
33 ns
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
15.8m Ω @ 25A, 10V
Resistance :
15.8mOhm
ECCN Code :
EAR99
Width :
4.82mm
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
43A Tc
Number of Pins :
3
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Length :
10.6426mm
Package / Case :
TO-220-3
Case Connection :
DRAIN
Turn On Delay Time :
6.3 ns
Vgs (Max) :
±20V
Published :
2008
Datasheets
IRFB3806PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRFB3806PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, IRFB3806PBF pinout, IRFB3806PBF datasheet PDF, IRFB3806PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRFB3806PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRFB3806PBF


N-Channel Tube 15.8m Ω @ 25A, 10V ±20V 1150pF @ 50V 30nC @ 10V TO-220-3

IRFB3806PBF Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1150pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 43A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 49 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFB3806PBF Features


a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 49 ns
a threshold voltage of 4V


IRFB3806PBF Applications


There are a lot of Infineon Technologies
IRFB3806PBF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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