IRFB3607PBF
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- Mfr.Part #
- IRFB3607PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 80A TO220AB
- Stock
- 151,008
- In Stock ：
- 151,008
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 46A, 10V
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Rise Time :
- 110ns
- Threshold Voltage :
- 4V
- Fall Time (Typ) :
- 96 ns
- Mount :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- Length :
- 10.6426mm
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Termination :
- Through Hole
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Drain to Source Breakdown Voltage :
- 75V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Dual Supply Voltage :
- 75V
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Width :
- 4.82mm
- Published :
- 2008
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 80A
- FET Type :
- N-Channel
- Height :
- 9.017mm
- Power Dissipation-Max :
- 140W Tc
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 140W
- ECCN Code :
- EAR99
- Resistance :
- 9mOhm
- Recovery Time :
- 50 ns
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 3070pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Nominal Vgs :
- 4 V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 16 ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Turn-Off Delay Time :
- 43 ns
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Datasheets
- IRFB3607PBF
N-Channel Tube 9m Ω @ 46A, 10V ±20V 3070pF @ 50V 84nC @ 10V TO-220-3
IRFB3607PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3070pF @ 50V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 43 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).
IRFB3607PBF Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 43 ns
a threshold voltage of 4V
IRFB3607PBF Applications
There are a lot of Infineon Technologies
IRFB3607PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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