IRFB3607GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Power Dissipation :

140W

Drain to Source Voltage (Vdss) :

75V

Continuous Drain Current (ID) :

80A

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

75V

Length :

10.668mm

Width :

4.826mm

Max Operating Temperature :

175°C

Fall Time (Typ) :

96 ns

Rise Time :

110ns

Vgs(th) (Max) @ Id :

4V @ 100µA

Input Capacitance :

3.07nF

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Rds On Max :

9 mΩ

Turn-Off Delay Time :

43 ns

Height :

16.51mm

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Supplier Device Package :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

Packaging :

Tube

Turn On Delay Time :

16 ns

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Power Dissipation-Max :

140W Tc

Mounting Type :

Through Hole

Number of Elements :

1

Drain to Source Resistance :

9mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

9mOhm @ 46A, 10V

Published :

2010