IRFB3507PBF
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- Mfr.Part #
- IRFB3507PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 97A TO220AB
- Stock
- 122,978
- In Stock ：
- 122,978
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HEXFET®
- Supplier Device Package :
- TO-220AB
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 75V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 97A Tc
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 8.8mOhm @ 58A, 10V
- Rise Time :
- 81ns
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Fall Time (Typ) :
- 49 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 97A
- Power Dissipation :
- 190W
- Power Dissipation-Max :
- 190W Tc
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 75V
- Rds On Max :
- 8.8 mΩ
- Number of Elements :
- 1
- Input Capacitance :
- 3.54nF
- Turn-Off Delay Time :
- 52 ns
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 20 ns
- Voltage - Rated DC :
- 75V
- Continuous Drain Current (ID) :
- 97A
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Vgs (Max) :
- ±20V
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 3540pF @ 50V
- Max Operating Temperature :
- 175°C
- Packaging :
- Tube
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Drain to Source Resistance :
- 7mOhm
- Datasheets
- IRFB3507PBF
N-Channel Tube 8.8mOhm @ 58A, 10V ±20V 3540pF @ 50V 130nC @ 10V 75V TO-220-3
IRFB3507PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3540pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 97A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=75V. And this device has 75V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 7mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 75V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFB3507PBF Features
a continuous drain current (ID) of 97A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 52 ns
single MOSFETs transistor is 7mOhm
a 75V drain to source voltage (Vdss)
IRFB3507PBF Applications
There are a lot of Infineon Technologies
IRFB3507PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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