IRFB33N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Fall Time (Typ) :

21 ns

Number of Elements :

1

Vgs (Max) :

±30V

Rise Time :

38ns

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Width :

4.69mm

Gate to Source Voltage (Vgs) :

30V

Height :

15.24mm

Published :

2000

Number of Terminations :

3

Factory Lead Time :

14 Weeks

Voltage - Rated DC :

150V

Threshold Voltage :

5.5V

Turn On Delay Time :

13 ns

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2020pF @ 25V

Rds On (Max) @ Id, Vgs :

56m Ω @ 20A, 10V

Power Dissipation :

3.8W

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Turn-Off Delay Time :

23 ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

150V

Resistance :

56Ohm

Continuous Drain Current (ID) :

33A

Case Connection :

DRAIN

FET Type :

N-Channel

REACH SVHC :

No SVHC

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Power Dissipation-Max :

3.8W Ta 170W Tc

Drain to Source Breakdown Voltage :

150V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Current Rating :

33A

Radiation Hardening :

No

Lead Free :

Contains Lead, Lead Free

ECCN Code :

EAR99

Length :

10.5156mm

Nominal Vgs :

5.5 V