IRFB33N15DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.8W Ta 170W Tc

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Dual Supply Voltage :

150V

Voltage - Rated DC :

150V

Rise Time :

38ns

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

56m Ω @ 20A, 10V

Width :

4.69mm

Operating Mode :

ENHANCEMENT MODE

Current Rating :

33A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Element Configuration :

Single

Length :

10.5156mm

REACH SVHC :

No SVHC

Height :

15.24mm

Nominal Vgs :

5.5 V

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

JEDEC-95 Code :

TO-220AB

Power Dissipation :

3.8W

Packaging :

Tube

ECCN Code :

EAR99

Vgs (Max) :

±30V

Resistance :

56Ohm

Threshold Voltage :

5.5V

Mount :

Through Hole

Drain to Source Breakdown Voltage :

150V

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Turn On Delay Time :

13 ns

FET Type :

N-Channel

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Contains Lead, Lead Free

Continuous Drain Current (ID) :

33A

Turn-Off Delay Time :

23 ns

Published :

2000

Input Capacitance (Ciss) (Max) @ Vds :

2020pF @ 25V

Fall Time (Typ) :

21 ns

Package / Case :

TO-220-3

Series :

HEXFET®

Transistor Element Material :

SILICON