IRFB33N15D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

33A

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

DS Breakdown Voltage-Min :

150V

Drain to Source Voltage (Vdss) :

150V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

130A

Vgs (Max) :

±30V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Mounting Type :

Through Hole

Terminal Position :

Single

Published :

2000

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Avalanche Energy Rating (Eas) :

330 mJ

Case Connection :

DRAIN

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

56m Ω @ 20A, 10V

RoHS Status :

Non-RoHS Compliant

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2020pF @ 25V

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.8W Ta 170W Tc

Drain-source On Resistance-Max :

0.056Ohm

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)