IRFB3307ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Recovery Time :

33 ns

Vgs(th) (Max) @ Id :

4V @ 150μA

Turn On Delay Time :

15 ns

Turn-Off Delay Time :

38 ns

Pulsed Drain Current-Max (IDM) :

480A

Transistor Application :

SWITCHING

Rise Time :

64ns

Termination :

Through Hole

Contact Plating :

Tin

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Length :

10.66mm

Radiation Hardening :

No

Current Rating :

120A

Continuous Drain Current (ID) :

120A

Mount :

Through Hole

Dual Supply Voltage :

75V

Width :

4.82mm

Height :

9.02mm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 50V

Power Dissipation-Max :

230W Tc

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Mounting Type :

Through Hole

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

75V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Power Dissipation :

230mW

Transistor Element Material :

SILICON

Series :

HEXFET®

FET Type :

N-Channel

Vgs (Max) :

±20V

Number of Elements :

1

Nominal Vgs :

4 V

Resistance :

5.8mOhm

Lead Free :

Lead Free

Published :

2004

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 75A, 10V

Case Connection :

DRAIN

Fall Time (Typ) :

65 ns

Threshold Voltage :

4V

Voltage - Rated DC :

75V