IRFB3307ZGPBF
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- Mfr.Part #
- IRFB3307ZGPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 120A TO220AB
- Stock
- 24,793
- In Stock ：
- 24,793
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Rise Time :
- 64ns
- Packaging :
- Tube
- Power Dissipation :
- 230W
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2008
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Fall Time (Typ) :
- 65 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-220AB
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 5.8mOhm @ 75A, 10V
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 75V
- Package / Case :
- TO-220-3
- Drain to Source Resistance :
- 5.8mOhm
- Radiation Hardening :
- No
- Height :
- 16.51mm
- Length :
- 10.668mm
- Turn-Off Delay Time :
- 38 ns
- Input Capacitance :
- 4.75nF
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Mount :
- Through Hole
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 75V
- Resistance :
- 5.8mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4750pF @ 50V
- Series :
- HEXFET®
- Number of Elements :
- 1
- Width :
- 4.826mm
- Rds On Max :
- 5.8 mΩ
- Power Dissipation-Max :
- 230W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 120A
- Turn On Delay Time :
- 15 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Datasheets
- IRFB3307ZGPBF
N-Channel Tube 5.8mOhm @ 75A, 10V ±20V 4750pF @ 50V 110nC @ 10V 75V TO-220-3
IRFB3307ZGPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4750pF @ 50V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.Using VGS=75V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 75V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 5.8mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 75V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFB3307ZGPBF Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 5.8mOhm
a 75V drain to source voltage (Vdss)
IRFB3307ZGPBF Applications
There are a lot of Infineon Technologies
IRFB3307ZGPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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