IRFB3307PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Voltage - Rated DC :

75V

Element Configuration :

Single

Case Connection :

DRAIN

Number of Pins :

3

Nominal Vgs :

4 V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 75A, 10V

Fall Time (Typ) :

63 ns

Avalanche Energy Rating (Eas) :

270 mJ

Turn-Off Delay Time :

51 ns

Height :

4.82mm

Number of Terminations :

3

Package / Case :

TO-220-3

Rise Time :

120ns

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 50V

Vgs (Max) :

±20V

Packaging :

Tube

Length :

10.6426mm

Turn On Delay Time :

26 ns

Power Dissipation-Max :

200W Tc

Lead Pitch :

2.54mm

Radiation Hardening :

No

Width :

4.826mm

Drain Current-Max (Abs) (ID) :

75A

REACH SVHC :

No SVHC

Published :

2004

Resistance :

6.3mOhm

Dual Supply Voltage :

75V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Current Rating :

130A

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 150μA

FET Type :

N-Channel

Threshold Voltage :

4V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

200W

Continuous Drain Current (ID) :

130A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

75V

Mounting Type :

Through Hole