IRFB3306PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

230W

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-220-3

Voltage - Rated DC :

60V

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 75A, 10V

FET Type :

N-Channel

Packaging :

Tube

Length :

10.668mm

REACH SVHC :

No SVHC

Recovery Time :

31 ns

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4V @ 150μA

Series :

HEXFET®

Transistor Element Material :

SILICON

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

Max Junction Temperature (Tj) :

175°C

Pulsed Drain Current-Max (IDM) :

620A

Rise Time :

76ns

Number of Terminations :

3

Power Dissipation-Max :

230W Tc

Width :

4.826mm

Vgs (Max) :

±20V

Published :

2011

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

15 ns

Fall Time (Typ) :

77 ns

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Height :

19.8mm

Continuous Drain Current (ID) :

160A

Number of Pins :

3

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Resistance :

4.2mOhm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

40 ns

Current Rating :

160A

Mounting Type :

Through Hole

Radiation Hardening :

No

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

ECCN Code :

EAR99