IRFB3306GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Turn On Delay Time :

15 ns

Number of Elements :

1

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 150μA

Fall Time (Typ) :

77 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

Power Dissipation-Max :

230W Tc

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 75A, 10V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Nominal Vgs :

4 V

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

40 ns

Length :

10.668mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Drain to Source Breakdown Voltage :

60V

Factory Lead Time :

10 Weeks

Number of Pins :

3

Power Dissipation :

230W

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Width :

4.826mm

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HEXFET®

Drain-source On Resistance-Max :

0.0042Ohm

Continuous Drain Current (ID) :

160A

Element Configuration :

Single

Rise Time :

76ns

Packaging :

Tube

Case Connection :

DRAIN

Published :

2009

Mount :

Through Hole

Height :

16.51mm

Pulsed Drain Current-Max (IDM) :

620A

FET Type :

N-Channel

Transistor Element Material :

SILICON