IRFB3256PBF

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Mfr.Part #
IRFB3256PBF
Manufacturer
International Rectifier
Package / Case
TO-220-3
Datasheet
Download
Description
IRFB3256 - 12V-300V N-CHANNEL PO
Stock
1
In Stock :
1

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
3.4m Ω @ 75A, 10V
Continuous Drain Current (ID) :
75A
Package / Case :
TO-220-3
Drain to Source Breakdown Voltage :
60V
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Published :
2011
Factory Lead Time :
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 48V
Number of Pins :
3
Rise Time :
77ns
ECCN Code :
EAR99
Turn-Off Delay Time :
55 ns
Operating Temperature :
-55°C~175°C TJ
Length :
10.67mm
Series :
HEXFET®
Mount :
Through Hole
Vgs (Max) :
±20V
Configuration :
Single
Turn On Delay Time :
22 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Weight :
6.000006g
Fall Time (Typ) :
64 ns
Height :
9.02mm
Width :
4.83mm
Gate to Source Voltage (Vgs) :
4V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
300W Tc
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Mounting Type :
Through Hole
Lead Free :
Lead Free
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 150μA
RoHS Status :
ROHS3 Compliant
Number of Channels :
1
Datasheets
IRFB3256PBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRFB3256PBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Channels:1, IRFB3256PBF pinout, IRFB3256PBF datasheet PDF, IRFB3256PBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRFB3256PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRFB3256PBF


N-Channel Tube 3.4m Ω @ 75A, 10V ±20V 6600pF @ 48V 195nC @ 10V TO-220-3

IRFB3256PBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6600pF @ 48V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 22 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 4VV.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFB3256PBF Features


a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns


IRFB3256PBF Applications


There are a lot of Infineon Technologies
IRFB3256PBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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