IRFB3256PBF
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- Mfr.Part #
- IRFB3256PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 75A TO220AB
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 48V
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Turn On Delay Time :
- 22 ns
- Factory Lead Time :
- 12 Weeks
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Drain to Source Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Number of Channels :
- 1
- Width :
- 4.83mm
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 4V
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 75A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Fall Time (Typ) :
- 64 ns
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Height :
- 9.02mm
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 77ns
- Configuration :
- Single
- Weight :
- 6.000006g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 75A
- Power Dissipation-Max :
- 300W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.67mm
- Turn-Off Delay Time :
- 55 ns
- Published :
- 2011
- Datasheets
- IRFB3256PBF
N-Channel Tube 3.4m Ω @ 75A, 10V ±20V 6600pF @ 48V 195nC @ 10V TO-220-3
IRFB3256PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6600pF @ 48V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 22 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 4VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFB3256PBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns
IRFB3256PBF Applications
There are a lot of Infineon Technologies
IRFB3256PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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