IRFB3207ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 150μA

Pulsed Drain Current-Max (IDM) :

670A

Transistor Element Material :

SILICON

Number of Terminations :

3

Turn-Off Delay Time :

55 ns

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 75A, 10V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Number of Elements :

1

Dual Supply Voltage :

75V

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

170A

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Series :

HEXFET®

Transistor Application :

SWITCHING

Radiation Hardening :

No

Nominal Vgs :

4 V

ECCN Code :

EAR99

Resistance :

4.1mOhm

Turn On Delay Time :

20 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Length :

10.66mm

Package / Case :

TO-220-3

Number of Pins :

3

Termination :

Through Hole

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

6920pF @ 50V

Power Dissipation :

300mW

Drain to Source Breakdown Voltage :

75V

Recovery Time :

54 ns

Published :

2006

Current Rating :

170A

FET Type :

N-Channel

Width :

4.82mm

Power Dissipation-Max :

300W Tc

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

68ns

Contact Plating :

Tin

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Voltage - Rated DC :

75V

Height :

9.017mm