IRFB3207ZPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Termination :

Through Hole

Height :

9.017mm

Number of Pins :

3

Current Rating :

170A

Resistance :

4.1mOhm

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

670A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

75V

Turn-Off Delay Time :

55 ns

Length :

10.66mm

Radiation Hardening :

No

Voltage - Rated DC :

75V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

6920pF @ 50V

Threshold Voltage :

4V

Transistor Application :

SWITCHING

Packaging :

Tube

ECCN Code :

EAR99

Case Connection :

DRAIN

Element Configuration :

Single

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 150μA

Turn On Delay Time :

20 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Dual Supply Voltage :

75V

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 75A, 10V

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

4 V

Published :

2006

Mount :

Through Hole

Recovery Time :

54 ns

Rise Time :

68ns

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

170A

Number of Elements :

1

Factory Lead Time :

12 Weeks

Power Dissipation :

300mW

Contact Plating :

Tin

Width :

4.82mm