IRFB3207ZGPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

210A

Pulsed Drain Current-Max (IDM) :

670A

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Width :

4.826mm

Rise Time :

68ns

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 150μA

Radiation Hardening :

No

Case Connection :

DRAIN

Fall Time (Typ) :

68 ns

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 75A, 10V

FET Type :

N-Channel

Number of Terminations :

3

Turn-Off Delay Time :

55 ns

Number of Pins :

3

Series :

HEXFET®

Element Configuration :

Single

Resistance :

4.1mOhm

Published :

2001

Turn On Delay Time :

20 ns

Power Dissipation :

300W

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Height :

16.51mm

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

6920pF @ 50V

Drain to Source Breakdown Voltage :

75V

Length :

10.668mm

Power Dissipation-Max :

300W Tc