IRFB3207PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Radiation Hardening :

No

Mounting Type :

Through Hole

Packaging :

Tube

Dual Supply Voltage :

75V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

75A

Turn-Off Delay Time :

68 ns

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

29 ns

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

720A

Rise Time :

120ns

Lead Pitch :

2.54mm

REACH SVHC :

No SVHC

Number of Elements :

1

Power Dissipation :

300W

Fall Time (Typ) :

74 ns

Published :

2004

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Series :

HEXFET®

Voltage - Rated DC :

75V

ECCN Code :

EAR99

Mount :

Through Hole

Current Rating :

180A

Width :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 50V

Drain to Source Breakdown Voltage :

75V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Length :

10.6426mm

Continuous Drain Current (ID) :

180A

Height :

4.82mm

Drain-source On Resistance-Max :

0.0045ohm

Number of Terminations :

3

Vgs (Max) :

±20V

Lead Free :

Lead Free

Element Configuration :

Single

Threshold Voltage :

4V

FET Type :

N-Channel

Case Connection :

DRAIN

Nominal Vgs :

4 V

Number of Pins :

3

Power Dissipation-Max :

330W Tc