IRFB3206PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

840A

Published :

2008

Number of Terminations :

3

Length :

10.668mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Contact Plating :

Tin

Number of Channels :

1

Case Connection :

DRAIN

Max Junction Temperature (Tj) :

175°C

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Packaging :

Tube

Power Dissipation-Max :

300W Tc

Continuous Drain Current (ID) :

210A

Turn On Delay Time :

19 ns

Rise Time :

82ns

Transistor Application :

SWITCHING

Width :

4.826mm

Lead Free :

Lead Free

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Recovery Time :

50 ns

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Current Rating :

210A

Input Capacitance (Ciss) (Max) @ Vds :

6540pF @ 50V

Voltage - Rated DC :

60V

Fall Time (Typ) :

83 ns

ECCN Code :

EAR99

Height :

19.8mm

Vgs (Max) :

±20V

Turn-Off Delay Time :

55 ns

Number of Elements :

1

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Radiation Hardening :

No

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Number of Pins :

3

Resistance :

3mOhm

Power Dissipation :

300W

Vgs(th) (Max) @ Id :

4V @ 150μA