IRFB3206GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

82ns

Number of Elements :

1

Power Dissipation :

300W

Lead Free :

Lead Free

Power Dissipation-Max :

300W Tc

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Drain to Source Breakdown Voltage :

60V

Mount :

Through Hole

Mounting Type :

Through Hole

FET Type :

N-Channel

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Fall Time (Typ) :

83 ns

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

6540pF @ 50V

Height :

16.51mm

Resistance :

3mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Width :

4.826mm

Factory Lead Time :

13 Weeks

Number of Pins :

3

Avalanche Energy Rating (Eas) :

170 mJ

Drain Current-Max (Abs) (ID) :

120A

Continuous Drain Current (ID) :

210A

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Length :

10.668mm

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

55 ns

Pulsed Drain Current-Max (IDM) :

840A

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Published :

2009

Vgs(th) (Max) @ Id :

4V @ 150μA

Case Connection :

DRAIN

Number of Terminations :

3

Turn On Delay Time :

19 ns

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Series :

HEXFET®