IRFB31N20DPBF
- Mfr.Part #
- IRFB31N20DPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 31A TO220AB
- Stock
- 104,810
- In Stock :
- 104,810
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- Termination :
- Through Hole
- JESD-609 Code :
- e3
- Published :
- 1998
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.69mm
- Mount :
- Through Hole
- Voltage - Rated DC :
- 200V
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Recovery Time :
- 300 ns
- Peak Reflow Temperature (Cel) :
- 250
- Factory Lead Time :
- 14 Weeks
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 3.1W Ta 200W Tc
- Threshold Voltage :
- 5.5V
- Packaging :
- Tube
- Power Dissipation :
- 200W
- Drain to Source Breakdown Voltage :
- 200V
- Current Rating :
- 31A
- Rds On (Max) @ Id, Vgs :
- 82m Ω @ 18A, 10V
- Rise Time :
- 38ns
- Dual Supply Voltage :
- 200V
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- Package / Case :
- TO-220-3
- Turn-Off Delay Time :
- 26 ns
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Resistance :
- 82mOhm
- Radiation Hardening :
- No
- Height :
- 8.763mm
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HEXFET®
- Fall Time (Typ) :
- 10 ns
- Nominal Vgs :
- 5.5 V
- Length :
- 10.5156mm
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 420 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2370pF @ 25V
- Lead Free :
- Contains Lead, Lead Free
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 31A
- Number of Terminations :
- 3
- Turn On Delay Time :
- 16 ns
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Datasheets
- IRFB31N20DPBF

N-Channel Tube 82m Ω @ 18A, 10V ±30V 2370pF @ 25V 107nC @ 10V TO-220-3
IRFB31N20DPBF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 420 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2370pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 31A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 26 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5.5V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
IRFB31N20DPBF Features
the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 26 ns
a threshold voltage of 5.5V
IRFB31N20DPBF Applications
There are a lot of Infineon Technologies
IRFB31N20DPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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