IRFB3077PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

210A

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

95 ns

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 75A, 10V

Pulsed Drain Current-Max (IDM) :

850A

Height :

9.02mm

Turn On Delay Time :

25 ns

Rise Time :

87ns

Current Rating :

210A

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 50V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Power Dissipation-Max :

370W Tc

Drain to Source Breakdown Voltage :

75V

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

200 mJ

Length :

10.668mm

REACH SVHC :

No SVHC

Power Dissipation :

370W

Series :

HEXFET®

Mount :

Through Hole

Recovery Time :

63 ns

Number of Elements :

1

Termination :

Through Hole

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Number of Terminations :

3

Turn-Off Delay Time :

69 ns

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Nominal Vgs :

4 V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Threshold Voltage :

4V

Voltage - Rated DC :

75V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Width :

4.82mm

Dual Supply Voltage :

75V

Published :

2006