IRFB3006PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 170A, 10V

Drain to Source Breakdown Voltage :

60V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Rise Time :

182ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

375W

REACH SVHC :

No SVHC

Number of Pins :

4

Height :

9.02mm

Turn On Delay Time :

16 ns

Avalanche Energy Rating (Eas) :

320 mJ

Case Connection :

DRAIN

Packaging :

Tube

Published :

2008

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Turn-Off Delay Time :

118 ns

Drain-source On Resistance-Max :

0.0025Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

189 ns

Number of Elements :

1

Threshold Voltage :

3V

Continuous Drain Current (ID) :

270A

FET Type :

N-Channel

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Power Dissipation-Max :

375W Tc

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

8970pF @ 50V

Vgs (Max) :

±20V

Mount :

Through Hole

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Series :

HEXFET®

Mounting Type :

Through Hole

Width :

4.826mm

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

JEDEC-95 Code :

TO-220AB

Length :

10.668mm