IRFB3006GPBF
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- Mfr.Part #
- IRFB3006GPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 195A TO220AB
- Stock
- 29,216
- In Stock ：
- 29,216
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 1080A
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8970pF @ 50V
- Power Dissipation-Max :
- 375W Tc
- Power Dissipation :
- 375W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-220-3
- Drain Current-Max (Abs) (ID) :
- 195A
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 60V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 189 ns
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Number of Pins :
- 3
- Rise Time :
- 182ns
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Series :
- HEXFET®
- Published :
- 2009
- Drain-source On Resistance-Max :
- 0.0025Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Turn On Delay Time :
- 16 ns
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Height :
- 16.51mm
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 16 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 270mA
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Qualification Status :
- Not Qualified
- Width :
- 4.826mm
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 118 ns
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 170A, 10V
- Length :
- 10.668mm
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Datasheets
- IRFB3006GPBF
N-Channel Tube 2.5m Ω @ 170A, 10V ±20V 8970pF @ 50V 300nC @ 10V TO-220-3
IRFB3006GPBF Overview
A device's maximum input capacitance is 8970pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 270mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 195A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 118 ns.Its maximum pulsed drain current is 1080A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFB3006GPBF Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 118 ns
based on its rated peak drain current 1080A.
IRFB3006GPBF Applications
There are a lot of Infineon Technologies
IRFB3006GPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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