IRFB3004PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

340A

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

1.75m Ω @ 195A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Height :

9.017mm

Resistance :

1.75MOhm

Turn-Off Delay Time :

90 ns

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

130 ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Mounting Type :

Through Hole

FET Type :

N-Channel

Packaging :

Tube

Number of Terminations :

3

Rise Time :

220ns

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Power Dissipation :

380W

Case Connection :

DRAIN

Published :

2008

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.826mm

Series :

HEXFET®

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Length :

10.668mm

Mount :

Through Hole

ECCN Code :

EAR99

Contact Plating :

Tin

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Transistor Element Material :

SILICON

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

23 ns

Power Dissipation-Max :

380W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA