IRFB260NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Resistance :

40Ohm

Package / Case :

TO-220-3

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

200V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Published :

2001

Avalanche Energy Rating (Eas) :

450 mJ

Input Capacitance (Ciss) (Max) @ Vds :

4220pF @ 25V

Recovery Time :

360 ns

FET Type :

N-Channel

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Voltage - Rated DC :

200V

Rise Time :

64ns

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Width :

4.69mm

Packaging :

Tube

Dual Supply Voltage :

200V

Turn-Off Delay Time :

52 ns

Transistor Element Material :

SILICON

Radiation Hardening :

No

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Turn On Delay Time :

17 ns

Number of Pins :

3

Height :

15.24mm

Pulsed Drain Current-Max (IDM) :

220A

Power Dissipation-Max :

380W Tc

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Case Connection :

DRAIN

Power Dissipation :

380W

Fall Time (Typ) :

50 ns

Contact Plating :

Tin

Length :

10.5156mm

Rds On (Max) @ Id, Vgs :

40m Ω @ 34A, 10V

Nominal Vgs :

4 V

Current Rating :

56A

Series :

HEXFET®

Continuous Drain Current (ID) :

56A

Number of Terminations :

3