IRFB23N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.69mm

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

200V

Turn-Off Delay Time :

26 ns

Avalanche Energy Rating (Eas) :

250 mJ

Mount :

Through Hole

Number of Pins :

3

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Element Configuration :

Single

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Current Rating :

24A

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

100MOhm

FET Type :

N-Channel

Nominal Vgs :

5.5 V

ECCN Code :

EAR99

Dual Supply Voltage :

200V

Turn On Delay Time :

14 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Fall Time (Typ) :

16 ns

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

100m Ω @ 14A, 10V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Termination :

Through Hole

Series :

HEXFET®

Continuous Drain Current (ID) :

24A

Width :

4.699mm

Pulsed Drain Current-Max (IDM) :

96A

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead, Lead Free

Transistor Element Material :

SILICON

Number of Terminations :

3

Published :

2000

Drain to Source Breakdown Voltage :

200V

Power Dissipation :

170W

Factory Lead Time :

14 Weeks

Threshold Voltage :

5.5V

Length :

10.54mm

Case Connection :

DRAIN

Rise Time :

32ns

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Package / Case :

TO-220-3

Power Dissipation-Max :

3.8W Ta 170W Tc

Contact Plating :

Tin