IRFB23N20D

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Drain-source On Resistance-Max :

0.1Ohm

FET Type :

N-Channel

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

200V

Published :

2000

Drain Current-Max (Abs) (ID) :

24A

DS Breakdown Voltage-Min :

200V

Number of Elements :

1

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

96A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

Avalanche Energy Rating (Eas) :

250 mJ

Mounting Type :

Through Hole

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

100m Ω @ 14A, 10V

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Power Dissipation-Max :

3.8W Ta 170W Tc

Series :

HEXFET®

ECCN Code :

EAR99

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON