IRFB23N15DPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rise Time :

32ns

Element Configuration :

Single

Dual Supply Voltage :

150V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Power Dissipation :

3.8W

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Case Connection :

DRAIN

Package / Case :

TO-220-3

Factory Lead Time :

14 Weeks

Resistance :

90mOhm

Continuous Drain Current (ID) :

23A

Turn-Off Delay Time :

18 ns

Avalanche Energy Rating (Eas) :

260 mJ

Power Dissipation-Max :

3.8W Ta 136W Tc

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Number of Pins :

3

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

150V

Turn On Delay Time :

10 ns

Packaging :

Tube

Current Rating :

23A

Threshold Voltage :

5.5V

Mount :

Through Hole

Width :

4.69mm

Lead Free :

Contains Lead, Lead Free

Nominal Vgs :

5.5 V

Pulsed Drain Current-Max (IDM) :

92A

Height :

15.24mm

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Length :

10.5156mm

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Termination :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

90m Ω @ 14A, 10V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

150V

Fall Time (Typ) :

8.4 ns

Published :

2000

Gate to Source Voltage (Vgs) :

30V

Series :

HEXFET®

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V