IRFB23N15DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Turn-Off Delay Time :

18 ns

Vgs (Max) :

±30V

FET Type :

N-Channel

Height :

15.24mm

Number of Pins :

3

Resistance :

90mOhm

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

5.5 V

Fall Time (Typ) :

8.4 ns

Width :

4.69mm

Avalanche Energy Rating (Eas) :

260 mJ

Termination :

Through Hole

Mount :

Through Hole

Threshold Voltage :

5.5V

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Turn On Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

92A

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Rds On (Max) @ Id, Vgs :

90m Ω @ 14A, 10V

Current Rating :

23A

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Power Dissipation-Max :

3.8W Ta 136W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Voltage - Rated DC :

150V

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

150V

Rise Time :

32ns

Case Connection :

DRAIN

Dual Supply Voltage :

150V

Published :

2000

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Continuous Drain Current (ID) :

23A

ECCN Code :

EAR99

Power Dissipation :

3.8W

Lead Free :

Contains Lead, Lead Free

Length :

10.5156mm

Radiation Hardening :

No