IRFB20N50KPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Width :

4.7mm

Supplier Device Package :

TO-220AB

Rise Time :

74ns

Number of Channels :

1

Power Dissipation :

280W

Height :

9.01mm

Resistance :

210mOhm

Rds On (Max) @ Id, Vgs :

250mOhm @ 12A, 10V

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Input Capacitance :

2.87nF

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.000006g

Drain to Source Breakdown Voltage :

500V

FET Type :

N-Channel

Element Configuration :

Single

Continuous Drain Current (ID) :

20A

Factory Lead Time :

11 Weeks

Threshold Voltage :

5V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

33 ns

Power Dissipation-Max :

280W Tc

Length :

10.41mm

Number of Elements :

1

Turn-Off Delay Time :

45 ns

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

REACH SVHC :

Unknown

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Max Operating Temperature :

150°C

Turn On Delay Time :

22 ns

Package / Case :

TO-220-3

Drain to Source Resistance :

250mOhm

Input Capacitance (Ciss) (Max) @ Vds :

2870pF @ 25V

Radiation Hardening :

No

Rds On Max :

250 mΩ

Mounting Type :

Through Hole

Min Operating Temperature :

-55°C

Vgs (Max) :

±30V