IRF9953PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power - Max :

2W

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

6.9 ns

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 250μA

Series :

HEXFET®

Nominal Vgs :

-1 V

Mounting Type :

Surface Mount

Number of Elements :

2

Width :

4mm

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Max Operating Temperature :

150°C

FET Feature :

Standard

Packaging :

Tube

Lead Free :

Lead Free

Threshold Voltage :

-1V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Dual

Continuous Drain Current (ID) :

-2.3A

Radiation Hardening :

No

Turn On Delay Time :

9.7 ns

Rise Time :

14ns

Rds On (Max) @ Id, Vgs :

250mOhm @ 1A, 10V

Base Part Number :

IRF9953PBF

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-30V

Power Dissipation :

2W

Published :

1997

Turn-Off Delay Time :

20 ns

Current Rating :

-2.3A

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Drain to Source Breakdown Voltage :

-30V

Input Capacitance :

190pF

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Drain to Source Resistance :

250mOhm

Rds On Max :

250 mΩ

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

8-SO

Height :

1.5mm

Current - Continuous Drain (Id) @ 25°C :

2.3A

Length :

5mm

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)