IRF8915TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2008

Turn-Off Delay Time :

7.1 ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2.5V

Resistance :

18.3mOhm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Current Rating :

8.9A

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 10V

Continuous Drain Current (ID) :

8.9A

Rise Time :

12ns

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

20V

Factory Lead Time :

12 Weeks

REACH SVHC :

No SVHC

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Width :

3.9878mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Series :

HEXFET®

Base Part Number :

IRF8915PBF

Rds On (Max) @ Id, Vgs :

18.3m Ω @ 8.9A, 10V

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 4.5V

Max Power Dissipation :

2W

Height :

1.4986mm

FET Feature :

Logic Level Gate

Length :

4.9784mm

Power Dissipation :

2W

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn On Delay Time :

6 ns

Fall Time (Typ) :

3.6 ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ