IRF8113TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

2910pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

30V

Resistance :

5.6MOhm

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

13 ns

Width :

3.9878mm

Configuration :

Single

Factory Lead Time :

12 Weeks

Number of Pins :

8

Length :

4.9784mm

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 4.5V

Row Spacing :

6.3 mm

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

2.2V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

3.5 ns

Number of Elements :

1

Current Rating :

16.6A

Published :

2005

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Mount :

Surface Mount

Height :

1.4986mm

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

17.2A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

17 ns

Continuous Drain Current (ID) :

17.2A

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 17.2A, 10V

Mounting Type :

Surface Mount

Lead Free :

Contains Lead, Lead Free

Rise Time :

8.9ns

Nominal Vgs :

2.2 V

Voltage - Rated DC :

30V

Vgs (Max) :

±20V

Termination :

SMD/SMT

Power Dissipation-Max :

2.5W Ta