IRF8010PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Fall Time (Typ) :

120 ns

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Mount :

Through Hole

Turn-Off Delay Time :

61 ns

Voltage - Rated DC :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

80A

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Length :

10.5156mm

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Radiation Hardening :

No

Series :

HEXFET®

Element Configuration :

Single

Packaging :

Tube

Package / Case :

TO-220-3

Factory Lead Time :

12 Weeks

Width :

4.69mm

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

260W Tc

Continuous Drain Current (ID) :

80A

Number of Terminations :

3

Recovery Time :

150 ns

Nominal Vgs :

4 V

Resistance :

15Ohm

Power Dissipation :

260W

Number of Pins :

3

Dual Supply Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Height :

8.763mm

Published :

2002

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3830pF @ 25V

Rds On (Max) @ Id, Vgs :

15m Ω @ 45A, 10V

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Threshold Voltage :

4V

Number of Elements :

1

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

100V

Rise Time :

130ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

75A