IRF8010STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

130ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Radiation Hardening :

No

Mount :

Surface Mount

Mounting Type :

Surface Mount

Contact Plating :

Tin

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

4V

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3830pF @ 25V

Width :

9.65mm

Published :

2003

Packaging :

Tape and Reel (TR)

Dual Supply Voltage :

100V

Nominal Vgs :

4 V

Number of Elements :

1

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Turn On Delay Time :

15 ns

Voltage - Rated DC :

100V

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

15m Ω @ 45A, 10V

Continuous Drain Current (ID) :

80A

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Power Dissipation :

260W

Power Dissipation-Max :

260W Tc

Resistance :

15mOhm

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

61 ns

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

120 ns

Length :

10.668mm

Height :

4.826mm

Number of Pins :

3

Terminal Form :

Gull wing

Series :

HEXFET®

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

75A

Current Rating :

80A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc