IRF8113TRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain to Source Voltage (Vdss) :

30 V

Gate Charge (Qg) (Max) @ Vgs :

36 nC @ 4.5 V

Rds On (Max) @ Id, Vgs :

5.6mOhm @ 17.2A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Supplier Device Package :

8-SOIC

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

17.2A (Ta)

FET Type :

N-Channel

Package :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation (Max) :

2.5W (Ta)

Input Capacitance (Ciss) (Max) @ Vds :

2910 pF @ 15 V

RoHS Status :

RoHS Compliant

Product Status :

Obsolete

Technology :

MOSFET (Metal Oxide)

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V