IRF820

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.67mm

Mounting Type :

Surface Mount

Rise Time :

8.6ns

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Voltage - Rated DC :

500V

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

D2PAK

Height :

4.83mm

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

360pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

2.5A

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Power Dissipation-Max :

3.1W Ta 50W Tc

Turn-Off Delay Time :

33 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

9.65mm

Weight :

1.437803g

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

3Ohm

FET Type :

N-Channel

Number of Channels :

1

Packaging :

Tube

Max Operating Temperature :

150°C

Mount :

Surface Mount

Published :

2016

Element Configuration :

Single

Fall Time (Typ) :

16 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance :

360pF

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

500V

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Rds On Max :

3 Ω

Current Rating :

2.5A

Turn On Delay Time :

8 ns