IRF8915

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

71A

Published :

2007

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

2W

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

0.0183Ohm

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 10V

Peak Reflow Temperature (Cel) :

245

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

20V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

18.3m Ω @ 8.9A, 10V

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G8

RoHS Status :

Non-RoHS Compliant

Surface Mount :

yes

JESD-609 Code :

e0

Terminal Finish :

TIN LEAD

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Avalanche Energy Rating (Eas) :

15 mJ

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

8.9A

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 4.5V

JEDEC-95 Code :

MS-012AA

Series :

HEXFET®

HTS Code :

8541.29.00.95

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

8.9A

Packaging :

Tube