IRF8910GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.55V @ 250µA

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Number of Pins :

8

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

19 mJ

Drain-source On Resistance-Max :

0.0134Ohm

Rds On (Max) @ Id, Vgs :

13.4m Ω @ 10A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

4.1 ns

Gate to Source Voltage (Vgs) :

20V

Length :

4.9784mm

Power Dissipation :

2W

Mount :

Surface Mount

Height :

1.4986mm

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Continuous Drain Current (ID) :

10A

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Drain to Source Breakdown Voltage :

20V

ECCN Code :

EAR99

Turn On Delay Time :

6.2 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

MS-012AA

Width :

3.9878mm

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 10V

Radiation Hardening :

No

Number of Elements :

1

Turn-Off Delay Time :

9.7 ns

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Rise Time :

10ns

Published :

2005

Base Part Number :

IRF8910GPBF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

2W