IRF8910GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Mounting Type :

Surface Mount

Radiation Hardening :

No

Rise Time :

10ns

Drain to Source Resistance :

18.3mOhm

Rds On Max :

13.4 mΩ

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 10V

Packaging :

Tube

Published :

2009

Series :

HEXFET®

FET Feature :

Logic Level Gate

Input Capacitance :

960pF

Fall Time (Typ) :

4.1 ns

Width :

3.9878mm

Number of Pins :

8

Number of Elements :

2

Power Dissipation :

2W

FET Type :

2 N-Channel (Dual)

Continuous Drain Current (ID) :

10A

Max Power Dissipation :

2W

Turn On Delay Time :

6.2 ns

Mount :

Surface Mount

Max Operating Temperature :

150°C

Turn-Off Delay Time :

9.7 ns

Drain to Source Breakdown Voltage :

20V

Drain to Source Voltage (Vdss) :

20V

Element Configuration :

Dual

Base Part Number :

IRF8910GPBF

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

10A

Height :

1.4986mm

Power - Max :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package :

8-SO

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

13.4mOhm @ 10A, 10V