IRF8714PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 15V

Dual Supply Voltage :

30V

Series :

HEXFET®

Turn-Off Delay Time :

11 ns

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

2.5W

Length :

4.9784mm

Avalanche Energy Rating (Eas) :

65 mJ

Published :

2007

Width :

3.9878mm

ECCN Code :

EAR99

Power Dissipation-Max :

2.5W Ta

Termination :

SMD/SMT

Recovery Time :

21 ns

Current - Continuous Drain (Id) @ 25°C :

14A Ta

FET Type :

N-Channel

Continuous Drain Current (ID) :

14A

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

1.8V

Rise Time :

9.9ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Element Configuration :

Single

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 14A, 10V

Height :

1.4986mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

1.8 V

Fall Time (Typ) :

5 ns

JESD-609 Code :

e3

Mount :

Surface Mount

Number of Terminations :

8

Turn On Delay Time :

10 ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Resistance :

8.7mOhm

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual