IRF8313TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Turn On Delay Time :

8.3 ns

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Terminal Form :

Gull wing

Rise Time :

9.9ns

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 9.7A, 10V

Fall Time (Typ) :

4.2 ns

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Mounting Type :

Surface Mount

Number of Terminations :

8

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Width :

3.9878mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Length :

4.9784mm

Continuous Drain Current (ID) :

9.7A

Mount :

Surface Mount

Resistance :

15.5MOhm

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Threshold Voltage :

1.8V

Published :

2008

Series :

HEXFET®

Number of Elements :

2

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.4986mm

Turn-Off Delay Time :

8.5 ns

REACH SVHC :

No SVHC

Element Configuration :

Dual

Number of Pins :

8

Max Power Dissipation :

2W

FET Type :

2 N-Channel (Dual)

Avalanche Energy Rating (Eas) :

46 mJ

Packaging :

Tape and Reel (TR)

Base Part Number :

IRF8313PBF

Nominal Vgs :

1.8 V

Power Dissipation :

2W

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE