IRF7946TR1PBF
- Mfr.Part #
- IRF7946TR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MX
- Datasheet
- Download
- Description
- MOSFET N CH 40V 90A DIRECTFET MX
- Stock
- 8,787
- In Stock :
- 8,787
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 40V
- Max Operating Temperature :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Continuous Drain Current (ID) :
- 90A
- Input Capacitance :
- 6.852nF
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 54 ns
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 96W
- FET Type :
- N-Channel
- Height :
- 530μm
- Published :
- 2013
- Package / Case :
- DirectFET™ Isometric MX
- Vgs(th) (Max) @ Id :
- 3.9V @ 150μA
- Rise Time :
- 49ns
- Rds On Max :
- 1.4 mΩ
- Number of Pins :
- 7
- Drain to Source Breakdown Voltage :
- 40V
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 3 V
- Threshold Voltage :
- 3V
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Drain to Source Resistance :
- 1.4mOhm
- Fall Time (Typ) :
- 41 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 212nC @ 10V
- Width :
- 5.05mm
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 96W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 6852pF @ 25V
- Supplier Device Package :
- DIRECTFET™ MX
- Radiation Hardening :
- No
- Series :
- HEXFET®, StrongIRFET™
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 20 ns
- Rds On (Max) @ Id, Vgs :
- 1.4mOhm @ 90A, 10V
- REACH SVHC :
- No SVHC
- Length :
- 6.35mm
- Datasheets
- IRF7946TR1PBF

N-Channel Tape & Reel (TR) 1.4mOhm @ 90A, 10V ±20V 6852pF @ 25V 212nC @ 10V 40V DirectFET™ Isometric MX
IRF7946TR1PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6852pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 54 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.4mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
IRF7946TR1PBF Features
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 54 ns
single MOSFETs transistor is 1.4mOhm
a threshold voltage of 3V
a 40V drain to source voltage (Vdss)
IRF7946TR1PBF Applications
There are a lot of Infineon Technologies
IRF7946TR1PBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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