IRF7862TRPBF
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- Mfr.Part #
- IRF7862TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A 8SO
- Stock
- 80,236
- In Stock ：
- 80,236
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Height :
- 1.4986mm
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2007
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Power Dissipation :
- 2.5W
- Length :
- 4.9784mm
- Power Dissipation-Max :
- 2.5W Ta
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 18 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Position :
- Dual
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Resistance :
- 3.3MOhm
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 30V
- Number of Pins :
- 8
- REACH SVHC :
- No SVHC
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 3.7m Ω @ 20A, 10V
- Turn On Delay Time :
- 16 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 2.35V @ 100μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 11 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- 2.35 V
- Number of Terminations :
- 8
- Rise Time :
- 19ns
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 21A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4090pF @ 15V
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 350 mJ
- Mount :
- Surface Mount
- Width :
- 3.9878mm
- Datasheets
- IRF7862TRPBF
N-Channel Tape & Reel (TR) 3.7m Ω @ 20A, 10V ±20V 4090pF @ 15V 45nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF7862TRPBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4090pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 21A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF7862TRPBF Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
IRF7862TRPBF Applications
There are a lot of Infineon Technologies
IRF7862TRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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